TSM4N90CZ C0G
MOSFET N-CHANNEL 900V 4A TO220Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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The Taiwan Semiconductor Corporation TSM4N90CZ-C0G is an N-Channel Power MOSFET designed for high-voltage applications. Featuring a 900V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 4A at 25°C (Tc), this component offers a low on-resistance of 4 Ohm maximum at 2A, 10V (Id, Vgs). The device supports a gate-source voltage (Vgs) range of ±30V, with a threshold voltage (Vgs(th)) of 4V maximum at 250µA. Key characteristics include a gate charge (Qg) of 25 nC maximum at 10V and an input capacitance (Ciss) of 955 pF maximum at 25V. The TSM4N90CZ-C0G is packaged in a TO-220-3 through-hole configuration, dissipates a maximum power of 38.7W (Tc), and operates across a temperature range of -55°C to 150°C (TJ). This component is utilized in power supply units, lighting, and industrial motor control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38.7W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 955 pF @ 25 V |
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