TSM4N80CZ C0G
MOSFET N-CHANNEL 800V 4A TO220Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM4N80CZ-C0G is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 800V and a continuous drain current (Id) of 4A at 25°C (Tc). The Rds On is specified at a maximum of 3 Ohms at 1.2A, 10V. With a gate charge (Qg) of 20 nC at 10V and input capacitance (Ciss) of 955 pF at 25V, it offers efficient switching characteristics. The TSM4N80CZ-C0G is housed in a TO-220-3 package for through-hole mounting, with a maximum power dissipation of 38.7W (Tc). This device is suitable for use in power supply, lighting, and industrial motor control applications. It operates within an ambient temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38.7W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 955 pF @ 25 V |
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