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TSM4N70CP ROG

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TSM4N70CP ROG

MOSFET N-CH 700V 3.5A TO252

Manufacturer: Taiwan Semiconductor Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Taiwan Semiconductor Corporation TSM4N70CP-ROG is a 700V N-Channel MOSFET designed for high-voltage applications. This component offers a continuous drain current of 3.5A (Tc) and a maximum power dissipation of 56W (Tc). Key electrical specifications include a drain-to-source voltage (Vdss) of 700V and a low on-resistance (Rds On) of 3.3 Ohm maximum at 2A and 10V gate drive. The device features a gate charge (Qg) of 14 nC maximum at 10V and an input capacitance (Ciss) of 595 pF maximum at 25V. It is packaged in a TO-252 (DPAK) surface mount configuration, supplied on tape and reel. The operating temperature range is -55°C to 150°C. This MOSFET is suitable for use in power supply, lighting, and industrial control applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3.5A (Tc)
Rds On (Max) @ Id, Vgs3.3Ohm @ 2A, 10V
FET Feature-
Power Dissipation (Max)56W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)700 V
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds595 pF @ 25 V

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