TSM4N70CH C5G
MOSFET N-CH 700V 3.5A TO251Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Taiwan Semiconductor Corporation TSM4N70CH-C5G is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 700 V and a continuous drain current (Id) of 3.5 A at 25°C, with a maximum power dissipation of 56 W (Tc). The Rds On is specified at a maximum of 3.3 Ohms at 2 A and 10 V gate drive. Key electrical characteristics include a gate charge (Qg) of 14 nC (max) at 10 V and input capacitance (Ciss) of 595 pF (max) at 25 V. The TSM4N70CH-C5G utilizes TO-251 (IPAK) packaging with through-hole mounting and operates across a temperature range of -55°C to 150°C (TJ). This device is suitable for use in power supply, lighting, and industrial motor control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 56W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251 (IPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 595 pF @ 25 V |
Request a Quote
Clients Also Buy
TSM7N90CI C0G
MOSFET N-CH 900V 7A ITO220AB
TSM2311CX RFG
MOSFET P-CHANNEL 20V 4A SOT23
TSM220NB06CR RLG
MOSFET N-CH 60V 8A/35A 8PDFN
