TSM4N60ECP ROG
MOSFET N-CHANNEL 600V 4A TO252Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM4N60ECP-ROG is a 600V N-Channel MOSFET designed for high-voltage switching applications. This device features a continuous drain current capability of 4A (Tc) at 25°C and a maximum power dissipation of 86.2W (Tc). The TSM4N60ECP-ROG offers a low on-resistance of 2.5Ohm maximum at 2A, 10V, and a gate charge of 12 nC maximum at 10V. It is packaged in a TO-252 (DPAK) surface-mount package, suitable for automated assembly. The operating junction temperature range is up to 150°C. This component finds application in power supply units, lighting, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 86.2W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 545 pF @ 25 V |
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