TSM480P06CZ C0G
MOSFET P-CH 60V 20A TO220Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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The Taiwan Semiconductor Corporation TSM480P06CZ-C0G is a P-Channel MOSFET designed for demanding applications. This through-hole component features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 20A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 48mOhm at 8A and 10V, with a maximum power dissipation of 66W (Tc). Key characteristics include a gate charge (Qg) of 22.4 nC (max) at 10V and input capacitance (Ciss) of 1250 pF (max) at 30V. The TSM480P06CZ-C0G is suitable for power management and switching circuits across various industrial sectors. It operates within a temperature range of -50°C to 150°C (TJ) and is supplied in a TO-220 package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 48mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 66W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 22.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1250 pF @ 30 V |
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