TSM480P06CI C0G
MOSFET P-CH 60V 20A ITO220Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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The Taiwan Semiconductor Corporation TSM480P06CI-C0G is a P-Channel MOSFET designed for power switching applications. This component features a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 20 A at 25°C, with a maximum power dissipation of 27 W (Tc). The on-resistance (Rds On) is a maximum of 48 mOhm at 8 A and 10 V gate-source voltage. It operates with a gate-source voltage range of ±20 V and has a threshold voltage (Vgs(th)) of 2.2 V at 250 µA. Key parameters include a gate charge (Qg) of 22.4 nC at 10 V and input capacitance (Ciss) of 1250 pF at 30 V. The TSM480P06CI-C0G is housed in an isolated ITO-220 package suitable for through-hole mounting and operates across a temperature range of -50°C to 150°C. This component is utilized in various industries requiring efficient power management.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 48mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 27W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | ITO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 22.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1250 pF @ 30 V |
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