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TSM4806CS RLG

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TSM4806CS RLG

MOSFET N-CHANNEL 20V 28A 8SOP

Manufacturer: Taiwan Semiconductor Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Taiwan Semiconductor Corporation TSM4806CS-RLG is an N-Channel Power MOSFET designed for efficient switching applications. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 28A at 25°C. With a low on-resistance (Rds On) of 20mOhm at 20A and 4.5V Vgs, it minimizes conduction losses. The TSM4806CS-RLG boasts a maximum power dissipation of 2W (Ta) and a gate charge (Qg) of 12.3 nC at 4.5V Vgs, facilitating fast switching speeds. Its input capacitance (Ciss) is 961 pF at 15V Vds. Packaged in an 8-SOP (8-SOIC) with a width of 3.90mm, this surface mount device operates across a temperature range of -55°C to 150°C. This MOSFET is suitable for use in power management and battery charging circuits across various industrial applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C28A (Ta)
Rds On (Max) @ Id, Vgs20mOhm @ 20A, 4.5V
FET Feature-
Power Dissipation (Max)2W (Ta)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device Package8-SOP
Grade-
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs12.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds961 pF @ 15 V
Qualification-

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