TSM4459CS RLG
MOSFET P-CHANNEL 30V 17A 8SOPManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM4459CS-RLG is a P-Channel MOSFET designed for power switching applications. This device features a Drain-to-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 17A at 25°C, with a maximum power dissipation of 2.5W. The Rds(On) is specified at a maximum of 5.2mOhm at 9A and 10V gate drive. With a Gate Charge (Qg) of 78.4 nC at 4.5V and Input Capacitance (Ciss) of 6205 pF at 15V, it offers efficient switching characteristics. The MOSFET is housed in an 8-SOP package and supports surface mounting. Operating temperature range is -55°C to 150°C. This component is suitable for use in industrial and automotive power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 78.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6205 pF @ 15 V |
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