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TSM4436CS RLG

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TSM4436CS RLG

MOSFET N-CHANNEL 60V 8A 8SOP

Manufacturer: Taiwan Semiconductor Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Taiwan Semiconductor Corporation TSM4436CS-RLG is an N-Channel MOSFET designed for efficient power switching applications. This component features a 60V drain-source voltage (Vdss) rating and a continuous drain current (Id) of 8A at 25°C (Ta). The TSM4436CS-RLG offers a low on-resistance (Rds On) of 36mOhm maximum at 4.6A and 10V Vgs. Key electrical characteristics include a gate charge (Qg) of 10.5 nC (max) at 4.5V and an input capacitance (Ciss) of 1100 pF (max) at 30V Vds. It is supplied in an 8-SOP package suitable for surface mounting with a maximum power dissipation of 2.5W (Ta). Operating temperature range is -55°C to 150°C (TJ). This device is commonly utilized in industrial automation, power management, and consumer electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C8A (Ta)
Rds On (Max) @ Id, Vgs36mOhm @ 4.6A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-SOP
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1100 pF @ 30 V

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