TSM4435BCS RLG
MOSFET P-CHANNEL 30V 9.1A 8SOPManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM4435BCS-RLG is a P-Channel MOSFET with a continuous drain current of 9.1A (Ta) at 25°C and a drain-to-source voltage of 30V. This device features a low on-resistance of 21mOhm at 9.1A and 10V Vgs, with a gate charge of 3.2 nC (Max) at 10V. The input capacitance (Ciss) is 1900 pF (Max) at 15V. Designed for surface mounting, it is housed in an 8-SOP package with a power dissipation of 2.5W (Ta). Operating temperature ranges from -55°C to 150°C. Commonly utilized in power management and switching applications across automotive, industrial, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 9.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 15 V |
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