TSM4424CS RVG
MOSFET N-CHANNEL 20V 8A 8SOPManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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The Taiwan Semiconductor Corporation TSM4424CS-RVG is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 8A at 25°C (Tc). With a maximum on-resistance (Rds On) of 30mOhm at 4.5A and 4.5V, it offers efficient power handling. The device supports gate drive voltages from 1.8V to 4.5V, with a threshold voltage (Vgs(th)) of 1V at 250µA. Key parameters include a maximum gate charge (Qg) of 11.2 nC at 4.5V and input capacitance (Ciss) of 500 pF at 10V. This MOSFET is housed in an 8-SOP package, suitable for surface mounting and supplied on tape and reel. Its power dissipation is rated at 2.5W (Ta) and it operates across a temperature range of -55°C to 150°C (TJ). This component finds application in power management, consumer electronics, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 4.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 10 V |
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