TSM3N90CP ROG
MOSFET N-CH 900V 2.5A TO252Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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The Taiwan Semiconductor Corporation TSM3N90CP-ROG is an N-Channel MOSFET designed for high-voltage applications. Featuring a Drain-Source Voltage (Vdss) of 900V and a continuous drain current (Id) of 2.5A at 25°C, this component offers a maximum power dissipation of 94W (Tc). The TSM3N90CP-ROG utilizes TO-252 (DPAK) surface mount packaging, ensuring efficient thermal management. Key electrical parameters include a maximum On-Resistance (Rds On) of 5.1 Ohm at 1.25A and 10V, and a gate-source threshold voltage (Vgs(th)) of 4V at 250µA. With a gate charge (Qg) of 17nC at 10V and input capacitance (Ciss) of 748pF at 25V, this MOSFET is suitable for demanding power conversion and control circuits across various industrial sectors. The operating junction temperature range extends to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.1Ohm @ 1.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 94W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 748 pF @ 25 V |
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