TSM3N90CI C0G
MOSFET N-CH 900V 2.5A ITO220ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Taiwan Semiconductor Corporation TSM3N90CI-C0G, an N-Channel Power MOSFET, offers a robust 900V drain-source voltage capability with a continuous drain current of 2.5A at 25°C (Tc). This device features a maximum on-resistance of 5.1 Ohms at 1.25A and 10V gate-source voltage, with a specified gate charge of 17 nC at 10V. The input capacitance (Ciss) is rated at a maximum of 748 pF at 25V. Designed for through-hole mounting, it utilizes the ITO-220AB package with an isolated tab and a maximum power dissipation of 94W (Tc). Operating temperature reaches up to 150°C (TJ), making it suitable for applications in power supply units, lighting, and industrial control systems. The technology employed is Metal Oxide MOSFET.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.1Ohm @ 1.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 94W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | ITO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 748 pF @ 25 V |
Request a Quote
Clients Also Buy
TSM70N380CH C5G
MOSFET N-CH 700V 11A TO251
TSM043NB04LCZ C0G
40V, 124A, SINGLE N-CHANNEL POWE
TSM60N900CP ROG
MOSFET N-CH 600V 4.5A TO252
