TSM3N80CZ C0G
MOSFET N-CHANNEL 800V 3A TO220Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM3N80CZ-C0G is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 800V and a continuous Drain Current (Id) of 3A at 25°C, with a maximum power dissipation of 94W (Tc). The TSM3N80CZ-C0G offers a low on-resistance of 4.2 Ohm maximum at 1.5A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 19 nC maximum at 10V and an Input Capacitance (Ciss) of 696 pF maximum at 25V. The device utilizes Metal Oxide MOSFET technology and is housed in a standard TO-220-3 through-hole package. It is suitable for use in power supply, lighting, and industrial control applications. Operating temperature ranges from -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 94W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 696 pF @ 25 V |
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