TSM3N80CP ROG
MOSFET N-CHANNEL 800V 3A TO252Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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The Taiwan Semiconductor Corporation TSM3N80CP-ROG is an N-channel power MOSFET designed for high-voltage applications. This component offers a Drain-to-Source Voltage (Vdss) of 800V and a continuous drain current (Id) of 3A at 25°C (Tc). With a maximum power dissipation of 94W (Tc) and a low on-resistance (Rds On) of 4.2 Ohms at 1.5A and 10V gate drive, it is suitable for demanding power conversion tasks.
Key electrical characteristics include a gate charge (Qg) of 19 nC at 10V and input capacitance (Ciss) of 696 pF at 25V. The device features a TO-252-3, DPAK surface-mount package, enabling efficient board integration. The operating temperature range is -55°C to 150°C (TJ), and the maximum gate-source voltage (Vgs) is ±30V. This MOSFET is commonly utilized in power supplies, lighting, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 94W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 696 pF @ 25 V |
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