TSM3N80CH C5G
MOSFET N-CHANNEL 800V 3A TO251Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM3N80CH-C5G is an N-Channel MOSFET with a drain-source voltage (Vdss) of 800V and a continuous drain current (Id) of 3A at 25°C. This device features a low on-resistance (Rds On) of 4.2 Ohm maximum at 1.5A and 10V gate-source voltage. The input capacitance (Ciss) is 696 pF maximum, and the gate charge (Qg) is 19 nC maximum. Designed for through-hole mounting in a TO-251 (IPAK) package, it offers a power dissipation capability of 94W at 25°C. The operating temperature range is -55°C to 150°C. This component is utilized in power supply applications, lighting, and industrial motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 94W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251 (IPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 696 pF @ 25 V |
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