TSM3N100CP ROG
MOSFET N-CH 1000V 2.5A TO252Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM3N100CP-ROG is an N-Channel Power MOSFET designed for high-voltage applications. This device features a maximum drain-source voltage (Vdss) of 1000V and a continuous drain current (Id) of 2.5A at 25°C (Tc). The ON-resistance (Rds On) is a maximum of 6 Ohms at 1.25A and 10V Vgs. Key parameters include a gate charge (Qg) of 19 nC maximum at 10V Vgs and input capacitance (Ciss) of 664 pF maximum at 25V Vds. The device offers a maximum power dissipation of 99W (Tc) and operates across a temperature range of -55°C to 150°C (TJ). Packaged in a TO-252 (DPAK) surface-mount configuration, it is suitable for use in power supplies, lighting, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 1.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 99W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 664 pF @ 25 V |
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