TSM3481CX6
-30V, -5.7A, SINGLE P-CHANNEL POManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM3481CX6 is a P-Channel, 30V MOSFET designed for efficient power switching. This component features a continuous drain current (Id) of 5.7A (Ta) and a maximum power dissipation of 1.6W (Ta). The Rds On is specified at a maximum of 48mOhm at 5.3A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 18.09 nC @ 10V and input capacitance (Ciss) of 1047.98 pF @ 15V. The TSM3481CX6 operates over a temperature range of -55°C to 150°C (TJ) and is housed in a SOT-26 surface mount package, supplied on tape and reel. This device is suitable for applications in consumer electronics and industrial power management.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 30 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 48mOhm @ 5.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-26 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.09 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1047.98 pF @ 15 V |
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