TSM3457CX6
-30V, -5A, SINGLE P-CHANNEL POWEManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM3457CX6 is a P-Channel MOSFET designed for power switching applications. This device features a drain-source breakdown voltage of 30V and a continuous drain current capability of 5A at 25°C. The Rds(on) is specified at a maximum of 60mOhm when driven at 10V with a 5A drain current. It supports gate drive voltages from 4.5V to 10V, with a maximum gate-source voltage of ±20V. The device exhibits a typical gate charge of 9.52 nC at 10V and input capacitance of 551.57 pF at 15V. Housed in a SOT-26 surface mount package, the TSM3457CX6 offers a maximum power dissipation of 2W (Ta). Operating temperature ranges from -55°C to 150°C. This component is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 30 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-26 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.52 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 551.57 pF @ 15 V |
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