TSM3443CX6 RFG
MOSFET P-CHANNEL 20V 4.7A SOT26Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation's TSM3443CX6-RFG is a P-Channel MOSFET designed for demanding applications. This component features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 4.7A at 25°C, with a maximum power dissipation of 2W. It offers a low on-resistance (Rds On) of 60mOhm at 4.7A and 4.5V Vgs, supported by drive voltages of 2.5V and 4.5V. The device is housed in a compact SOT-26 package for surface mounting and operates across an industrial temperature range of -55°C to 150°C. Key electrical characteristics include a gate charge (Qg) of 9 nC at 4.5V and input capacitance (Ciss) of 640pF at 10V. This MOSFET is commonly utilized in power management, battery charging, and motor control circuits across various industries.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 4.7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | SOT-26 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 640 pF @ 10 V |
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