TSM301K12CQ RFG
MOSFET P-CH 20V 4.5A 6TDFNManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Taiwan Semiconductor Corporation TSM301K12CQ-RFG is a P-Channel MOSFET designed for efficient power switching applications. This component features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 4.5A at 25°C. With a maximum on-resistance (Rds On) of 94mOhm at 2.8A and 4.5V, and a gate threshold voltage (Vgs(th)) of 500mV at 250µA, it offers low conduction losses. The TSM301K12CQ-RFG is housed in a compact 6-TDFN (2x2) surface-mount package, suitable for space-constrained designs. Its power dissipation capability is 6.5W (Tc). This MOSFET is utilized across various industries, including consumer electronics and industrial automation. The TSM301K12CQ-RFG is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 94mOhm @ 2.8A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 6.5W (Tc) |
| Vgs(th) (Max) @ Id | 500mV @ 250µA (Min) |
| Supplier Device Package | 6-TDFN (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5.2 pF @ 6 V |
Request a Quote
Clients Also Buy
TSM220NB06CR RLG
MOSFET N-CH 60V 8A/35A 8PDFN
TSM7NC60CF C0G
MOSFET N-CH 600V 7A ITO220S
TSM900N06CP ROG
MOSFET N-CHANNEL 60V 11A TO252
