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TSM2NB65CP ROG

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TSM2NB65CP ROG

MOSFET N-CHANNEL 650V 2A TO252

Manufacturer: Taiwan Semiconductor Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Taiwan Semiconductor Corporation's TSM2NB65CP-ROG is an N-Channel power MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 650V and a continuous drain current (Id) of 2A at 25°C. With a maximum on-resistance (Rds On) of 5 Ohm at 1A and 10V, it offers efficient switching characteristics. The device is packaged in a TO-252 (DPAK) surface-mount package, suitable for automated assembly processes. Key parameters include a gate charge (Qg) of 13 nC and input capacitance (Ciss) of 390 pF, both measured at specified voltages. The maximum power dissipation is 65W, and it operates across a temperature range of -55°C to 150°C. This MOSFET is utilized in power supply units, lighting, and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Rds On (Max) @ Id, Vgs5Ohm @ 1A, 10V
FET Feature-
Power Dissipation (Max)65W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds390 pF @ 25 V

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