TSM2NB65CH X0G
MOSFET N-CHANNEL 650V 2A TO251Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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The Taiwan Semiconductor Corporation TSM2NB65CH-X0G is a 650V N-Channel Power MOSFET designed for demanding applications. This component features a continuous drain current of 2A at 25°C (Tc) and a maximum power dissipation of 65W (Tc). With a low on-resistance of 5Ohm at 1A and 10V Vgs, it offers efficient switching characteristics. The TSM2NB65CH-X0G has a gate charge of 13 nC at 10V and input capacitance of 390 pF at 25V. It is housed in a TO-251-3 Stub Leads, IPAK package, suitable for through-hole mounting. This MOSFET operates within a temperature range of -55°C to 150°C. Applications include power supplies, motor control, and lighting systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 65W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251 (IPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 390 pF @ 25 V |
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