TSM2N7002KCX RFG
MOSFET N-CH 60V 300MA SOT23Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM2N7002KCX-RFG is an N-Channel MOSFET with a drain-to-source voltage (Vdss) of 60V. This device features a continuous drain current (Id) of 300mA at 25°C and a maximum power dissipation of 300mW (Ta). The Rds On is specified at 2 Ohms maximum for an Id of 300mA and Vgs of 10V. Gate charge (Qg) is 0.4 nC maximum at 4.5V, and input capacitance (Ciss) is 30 pF maximum at 25V. The MOSFET is housed in a SOT-23 package and is supplied on tape and reel. It supports gate-source voltages up to ±20V and has a threshold voltage (Vgs(th)) of 2.5V maximum at 250µA. This component is suitable for applications in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Ta) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 300mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SOT-23 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 30 pF @ 25 V |
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