TSM2N7000KCT B0G
MOSFET N-CHANNEL 60V 300MA TO92Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Taiwan Semiconductor Corporation TSM2N7000KCT-B0G is an N-Channel enhancement mode MOSFET designed for general-purpose switching applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) capability of 300mA at 25°C ambient. The device exhibits a maximum On-Resistance (Rds On) of 5 Ohms when driven at 10V with a drain current of 100mA. Key parameters include a Gate Charge (Qg) of 0.4 nC at 4.5V and an input capacitance (Ciss) of 60 pF at 25V. The TSM2N7000KCT-B0G is housed in a standard TO-92 package, suitable for through-hole mounting. Its operating temperature range is specified from -55°C to 150°C. This device finds application in various electronic systems, including power management circuits and low-power switching solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Ta) |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 100mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 400mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-92 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 60 pF @ 25 V |
Request a Quote
Clients Also Buy
TSM7N90CI C0G
MOSFET N-CH 900V 7A ITO220AB
TSM2311CX RFG
MOSFET P-CHANNEL 20V 4A SOT23
TSM60N900CP ROG
MOSFET N-CH 600V 4.5A TO252
