TSM2N7000KCT A3G
MOSFET N-CHANNEL 60V 300MA TO92Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM2N7000KCT-A3G is an N-Channel MOSFET designed for general-purpose switching applications. This device features a 60V drain-source breakdown voltage and a continuous drain current rating of 300mA at 25°C ambient temperature. The TSM2N7000KCT-A3G exhibits a maximum on-resistance of 5 Ohms at 100mA drain current and 10V gate-source voltage. With a gate charge of 0.4 nC and input capacitance of 60pF, it is suitable for various analog and digital circuits. The device is packaged in a standard TO-92 (TO-226AA) through-hole package, supplied in cut tape. Operating temperature range is from -55°C to 150°C. This component finds utility in industrial control, consumer electronics, and power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Ta) |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 100mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 400mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-92 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 60 pF @ 25 V |
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