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TSM2N7000KCT A3G

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TSM2N7000KCT A3G

MOSFET N-CHANNEL 60V 300MA TO92

Manufacturer: Taiwan Semiconductor Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Taiwan Semiconductor Corporation TSM2N7000KCT-A3G is an N-Channel MOSFET designed for general-purpose switching applications. This device features a 60V drain-source breakdown voltage and a continuous drain current rating of 300mA at 25°C ambient temperature. The TSM2N7000KCT-A3G exhibits a maximum on-resistance of 5 Ohms at 100mA drain current and 10V gate-source voltage. With a gate charge of 0.4 nC and input capacitance of 60pF, it is suitable for various analog and digital circuits. The device is packaged in a standard TO-92 (TO-226AA) through-hole package, supplied in cut tape. Operating temperature range is from -55°C to 150°C. This component finds utility in industrial control, consumer electronics, and power management systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Cut Tape (CT)
Technical Details:
PackagingCut Tape (CT)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C300mA (Ta)
Rds On (Max) @ Id, Vgs5Ohm @ 100mA, 10V
FET Feature-
Power Dissipation (Max)400mW (Ta)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageTO-92
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs0.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds60 pF @ 25 V

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