TSM2N60SCW RPG
MOSFET N-CH 600V 600MA SOT223Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM2N60SCW-RPG is a 600V N-Channel power MOSFET in a SOT-223 package. This device features a continuous drain current of 600mA at 25°C (Tc) and a maximum power dissipation of 2.5W (Tc). The on-resistance (Rds On) is specified at 5 Ohms maximum for a drain current of 600mA and a gate-source voltage of 10V. Key parameters include a drain-source breakdown voltage (Vdss) of 600V and a gate charge (Qg) of 13 nC maximum at 10V. Input capacitance (Ciss) is a maximum of 435pF at 25V. Operating temperature range is -55°C to 150°C. This component is suitable for applications in power supply circuits and general-purpose switching. The TSM2N60SCW-RPG is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 600mA (Tc) |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 600mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 435 pF @ 25 V |
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