TSM2N60ECP ROG
MOSFET N-CHANNEL 600V 2A TO252Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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The Taiwan Semiconductor Corporation TSM2N60ECP-ROG is a 600V N-channel Power MOSFET designed for surface-mount applications. This TO-252 (DPAK) packaged device offers a continuous drain current of 2A at 25°C (Tc) and a maximum power dissipation of 52.1W (Tc). Key electrical characteristics include a drain-to-source voltage (Vdss) of 600V, a maximum on-resistance (Rds On) of 4 Ohm at 1A and 10V gate-source voltage, and a gate charge (Qg) of 9.5 nC at 10V. Input capacitance (Ciss) is specified at a maximum of 362 pF at 25V. The device operates over a temperature range of -55°C to 150°C (TJ). This component is suitable for use in various industrial and consumer electronics applications requiring high voltage switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 52.1W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 362 pF @ 25 V |
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