TSM2N60ECH C5G
MOSFET N-CHANNEL 600V 2A TO251Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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The Taiwan Semiconductor Corporation TSM2N60ECH-C5G is a N-Channel power MOSFET designed for high voltage applications. This device features a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) capability of 2 A at 25°C. With a maximum on-resistance (Rds On) of 4 Ohm at 1 A and 10 V gate-source voltage, it offers efficient switching characteristics. The TSM2N60ECH-C5G is housed in a TO-251 (IPAK) package, suitable for through-hole mounting. Key parameters include a gate charge (Qg) of 9.5 nC at 10 V and an input capacitance (Ciss) of 362 pF at 25 V. It operates across a temperature range of -55°C to 150°C. This component finds application in power supply units and general-purpose switching applications within industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 52.1W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-251 (IPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 362 pF @ 25 V |
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