TSM2N100CH C5G
MOSFET N-CH 1000V 1.85A TO251Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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The Taiwan Semiconductor Corporation TSM2N100CH-C5G is an N-Channel Power MOSFET designed for high-voltage applications. This component features a maximum drain-source voltage (Vdss) of 1000 V and a continuous drain current (Id) of 1.85 A at 25°C. With a maximum power dissipation of 77 W at the case temperature, it is suitable for demanding power switching tasks. The Rds On is specified at a maximum of 8.5 Ohms with a gate-source voltage (Vgs) of 10 V and a drain current (Id) of 900 mA. Key parameters include a gate charge (Qg) of 17 nC and input capacitance (Ciss) of 625 pF, both specified at 10 V and 25 V respectively. The device utilizes Metal Oxide technology and is housed in a TO-251 (IPAK) package, a through-hole mounting type. Operating temperature range is -55°C to 150°C. This MOSFET finds application in power supplies, lighting, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.85A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.5Ohm @ 900mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 77W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-251 (IPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 625 pF @ 25 V |
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