TSM2328CX
100V, 1.5A, SINGLE N-CHANNEL POWManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Taiwan Semiconductor Corporation TSM2328CX is a N-Channel MOSFET designed for efficient power switching. This device features a Drain-Source Voltage (Vdss) of 100 V and a continuous Drain Current (Id) of 1.5 A at 25°C. With a maximum On-Resistance (Rds On) of 250 mOhm at 1.5 A and 10 V, it offers low conduction losses. The TSM2328CX is housed in a SOT-23 package, suitable for surface mounting. Key parameters include a Gate Charge (Qg) of 11.1 nC (max) at 5 V and an Input Capacitance (Ciss) of 975 pF (max) at 25 V. It operates within a temperature range of 150°C (TJ) and supports a Gate-Source Voltage (Vgs) up to ±20V. This component finds application in various power management solutions across industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 30 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.38W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SOT-23 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.1 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 975 pF @ 25 V |
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