TSM2318CX RFG
MOSFET N-CHANNEL 40V 3.9A SOT23Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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The Taiwan Semiconductor Corporation TSM2318CX-RFG is an N-Channel MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 40V and a continuous drain current (Id) of 3.9A at 25°C, with a maximum power dissipation of 1.25W (Ta). The Rds On is specified at a maximum of 45mOhm at 3.9A and 10V gate-source voltage. Key parameters include a Gate Charge (Qg) of 10 nC (max) at 10V and Input Capacitance (Ciss) of 540 pF (max) at 20V. The device operates within a temperature range of -55°C to 150°C (TJ) and is housed in a standard SOT-23 (TO-236-3, SC-59) surface mount package, supplied on tape and reel. This MOSFET is suitable for use in power management, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 30 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 3.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-23 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 540 pF @ 20 V |
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