TSM2311CX-01 RFG
MOSFET P-CH 20V 4A SOT23Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM2311CX-01-RFG is a P-Channel MOSFET designed for surface mount applications. This component offers a Drain to Source Voltage (Vdss) of 20V and a continuous drain current (Id) capacity of 4A at 25°C. The Rds On is specified at a maximum of 55mOhm for an Id of 4A and Vgs of 4.5V, with drive voltages ranging from 2.5V to 4.5V. Key specifications include a maximum power dissipation of 900mW (Ta) and a gate charge of 9 nC at 4.5V. The input capacitance (Ciss) is 640pF maximum at 6V. The device operates within a temperature range of -55°C to 150°C (TJ). Packaged in a SOT-23 (TO-236-3, SC-59) format, this Taiwan Semiconductor Corporation MOSFET is suitable for use in consumer electronics, industrial automation, and power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 900mW (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | SOT-23 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 640 pF @ 6 V |
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