TSM2307CX RFG
MOSFET P-CHANNEL 30V 3A SOT23Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM2307CX-RFG is a P-channel MOSFET with a Drain-Source Voltage (Vdss) of 30V. This device features a continuous drain current (Id) of 3A at 25°C (Tc) and a maximum power dissipation of 1.25W (Ta). The Rds On is specified at a maximum of 95mOhm when Id is 3A and Vgs is 10V, with drive voltages ranging from 4.5V to 10V. Gate charge (Qg) is a maximum of 10 nC at 10V Vgs, and input capacitance (Ciss) is 565 pF maximum at 30V Vds. Operating temperature reaches up to 150°C (TJ). The component is housed in a SOT-23 package, supplied on tape and reel. This MOSFET is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 95mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-23 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 565 pF @ 30 V |
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