TSM2303CX RFG
MOSFET P-CHANNEL 30V 1.3A SOT23Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Taiwan Semiconductor Corporation TSM2303CX-RFG is a P-Channel MOSFET designed for power management applications. This device features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 1.3A at 25°C. The Rds On is specified at a maximum of 180mOhm when conducting 1.3A with a 10V gate-source voltage. With a 4.5V drive voltage, the Rds On characteristics are also defined. The TSM2303CX-RFG has a maximum power dissipation of 700mW (Ta) and a gate charge (Qg) of 3.2 nC at 4.5V. Input capacitance (Ciss) is a maximum of 565 pF at 10V. This component is supplied in a SOT-23 package, suitable for surface mounting, and operates across a temperature range of -55°C to 150°C. It finds application in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 1.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-23 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 565 pF @ 10 V |
Request a Quote
Clients Also Buy
TSM7N90CI C0G
MOSFET N-CH 900V 7A ITO220AB
TQM056NH04LCR RLG
40V, 54A, SINGLE N-CHANNEL POWER
TSM045NA03CR RLG
MOSFET N-CH 30V 108A 8PDFN
