TSM2302CX RFG
MOSFET N-CHANNEL 20V 3.9A SOT23Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM2302CX-RFG is an N-Channel MOSFET with a Drain-Source Voltage (Vdss) of 20 V. This device offers a continuous drain current (Id) of 3.9 A at 25°C and a maximum power dissipation of 1.5 W (Tc). The Rds On is specified at a maximum of 65 mOhm at 3.2 A and 4.5 V gate drive. Key parameters include a Gate Charge (Qg) of 7.8 nC maximum at 4.5 V and Input Capacitance (Ciss) of 587 pF maximum at 10 V. The MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is housed in a SOT-23 package and is supplied on tape and reel. This component is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 30 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 3.2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Tc) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | SOT-23 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 587 pF @ 10 V |