TSM2301CX RFG
MOSFET P-CHANNEL 20V 2.8A SOT23Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation's TSM2301CX-RFG is a P-Channel MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 2.8A at 25°C. The device offers a low on-resistance (Rds On) of 130mOhm maximum at 2.8A and 4.5V Vgs, with a threshold voltage (Vgs(th)) of 950mV maximum at 250µA. Key parameters include a gate charge (Qg) of 4.5 nC maximum at 4.5V and input capacitance (Ciss) of 447 pF maximum at 6V. The TSM2301CX-RFG is housed in a SOT-23 package and supports surface mount installation. Its power dissipation is rated at 900mW (Ta). This MOSFET is suitable for use in consumer electronics, industrial control, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 2.8A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 900mW (Ta) |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Supplier Device Package | SOT-23 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 447 pF @ 6 V |
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