TSM2301BCX RFG
MOSFET P-CHANNEL 20V 2.8A SOT23Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation's TSM2301BCX-RFG is a P-Channel MOSFET designed for efficient power switching applications. This component features a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 2.8A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 100mOhm maximum at 2.8A and 4.5V, ensuring minimal power loss. With a maximum power dissipation of 900mW (Ta), it is suitable for thermal management in compact designs. The TSM2301BCX-RFG utilizes MOSFET technology and is housed in a SOT-23 package, facilitating surface-mount assembly. Key parameters include a gate charge (Qg) of 4.5 nC maximum at 4.5V and input capacitance (Ciss) of 415 pF maximum at 6V. This MOSFET is utilized across industries including consumer electronics and industrial automation. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2.8A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 900mW (Ta) |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Supplier Device Package | SOT-23 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 415 pF @ 6 V |
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