TSM22P10CZ C0G
MOSFET P-CH 100V 22A TO220Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM22P10CZ-C0G is a P-Channel MOSFET with a drain-source voltage (Vdss) of 100V. This component offers a continuous drain current (Id) of 22A at 25°C (Tc) and can dissipate up to 125W (Tc). The on-resistance (Rds On) is specified at a maximum of 140mOhm when conducting 20A with a gate-source voltage (Vgs) of 10V. Gate drive voltage ranges from 4.5V to 10V, with a maximum Vgs of ±25V. The threshold voltage (Vgs(th)) is a maximum of 3V at 250µA. Key capacitance values include input capacitance (Ciss) of 2250pF at 30V and gate charge (Qg) of 42nC at 10V. This through-hole component is housed in a TO-220-3 package and operates at junction temperatures up to 150°C. It is suitable for applications in power management and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2250 pF @ 30 V |
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