TSM22P10CI C0G
MOSFET P-CH 100V 22A ITO220Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM22P10CI-C0G is a P-Channel MOSFET with a Drain-Source Voltage (Vdss) of 100 V. It offers a continuous drain current (Id) of 22A at 25°C (Tc) and a maximum power dissipation of 48W (Tc). The Rds On is rated at a maximum of 140mOhm at 20A and 10V Vgs. This component features a gate charge (Qg) of 42 nC maximum at 10 V Vgs and an input capacitance (Ciss) of 2250 pF maximum at 30 V Vds. The TSM22P10CI-C0G is housed in an isolated ITO-220 package, suitable for through-hole mounting. It operates within a temperature range of 150°C (TJ) and has a maximum gate-source voltage (Vgs) of ±25V. This MOSFET is utilized in various industrial applications including power switching and motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | ITO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2250 pF @ 30 V |
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