TSM210N06CZ C0G
MOSFET N-CHANNEL 60V 210A TO220Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM210N06CZ-C0G is a 60V N-Channel MOSFET designed for high-power applications. This component features a continuous drain current (Id) of 210A at 25°C and a low on-resistance (Rds On) of 3.1mOhm at 90A and 10V Vgs. With a maximum power dissipation of 250W (Tc), it is suitable for demanding thermal environments. The TSM210N06CZ-C0G is housed in a TO-220-3 package, facilitating through-hole mounting. Key electrical characteristics include a gate charge (Qg) of 160 nC at 10V and input capacitance (Ciss) of 7900 pF at 30V. This MOSFET is utilized in industries such as automotive, industrial power supplies, and motor control. Operating temperature ranges from -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 210A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.1mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7900 pF @ 30 V |
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