TSM1NB60SCT B0G
MOSFET N-CH 600V 500MA TO92Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM1NB60SCT-B0G is an N-Channel MOSFET with a drain-source voltage (Vdss) of 600V. This device offers a continuous drain current (Id) of 500mA at 25°C and a maximum power dissipation of 2.5W. The Rds On is specified at 10 Ohms maximum for an Id of 250mA and Vgs of 10V. Key parameters include a gate charge (Qg) of 6.1 nC maximum at 10V and input capacitance (Ciss) of 138 pF maximum at 25V. The TSM1NB60SCT-B0G features a gate-source voltage (Vgs) tolerance of ±30V and a threshold voltage (Vgs(th)) of 4.5V maximum at 250µA. This component is housed in a TO-92 package and is suitable for through-hole mounting. It operates across an industrial temperature range of -55°C to 150°C. This MOSFET is commonly employed in power supply switching, motor control, and general-purpose switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 500mA (Tc) |
| Rds On (Max) @ Id, Vgs | 10Ohm @ 250mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-92 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 138 pF @ 25 V |
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