TSM1N80CW RPG
MOSFET N-CH 800V 300MA SOT223Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation's TSM1N80CW-RPG is an N-Channel Power MOSFET designed for high-voltage applications. This device features a Drain-Source Voltage (Vdss) of 800V and a continuous drain current (Id) of 300mA at 25°C. With a maximum power dissipation of 2.1W (Tc), it is housed in a SOT-223 (TO-261-4, TO-261AA) surface-mount package. Key electrical characteristics include a low on-resistance (Rds On) of 21.6 Ohms at 150mA and 10V, and a gate charge (Qg) of 6 nC at 10V. The operating temperature range is -55°C to 150°C. This component is suitable for use in power supply units, lighting control, and other high-voltage switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Ta) |
| Rds On (Max) @ Id, Vgs | 21.6Ohm @ 150mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 25 V |
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