TSM1N45DCS RLG
MOSFET N-CH 450V 500MA 8SOPManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Taiwan Semiconductor Corporation TSM1N45DCS-RLG is an N-Channel MOSFET designed for applications requiring high voltage switching. This device features a drain-source voltage (Vdss) of 450V and a continuous drain current (Id) of 500mA at 25°C. The Rds On is specified at a maximum of 4.25 Ohms at 250mA and 10V gate-source voltage. With a gate charge of 6.5 nC and input capacitance of 185 pF, it offers efficient switching characteristics. The device is packaged in an 8-SOP (8-SOIC) with a 3.90mm width for surface mounting, supplied on tape and reel. Power dissipation is rated at 900mW (Ta). Operating temperature ranges from -55°C to 150°C. This component is suitable for use in power supply units, lighting controls, and general-purpose switching applications within the consumer electronics and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 500mA (Tc) |
| Rds On (Max) @ Id, Vgs | 4.25Ohm @ 250mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 900mW (Ta) |
| Vgs(th) (Max) @ Id | 4.9V @ 250mA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±50V |
| Drain to Source Voltage (Vdss) | 450 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 185 pF @ 25 V |
Request a Quote
Clients Also Buy
TSM7N90CI C0G
MOSFET N-CH 900V 7A ITO220AB
TQM056NH04LCR RLG
40V, 54A, SINGLE N-CHANNEL POWER
TSM045NA03CR RLG
MOSFET N-CH 30V 108A 8PDFN
