TSM1N45CW RPG
MOSFET N-CH 450V 500MA SOT223Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Taiwan Semiconductor Corporation TSM1N45CW-RPG is a 450V N-Channel Power MOSFET in a SOT-223 package. This device offers a continuous drain current (Id) of 500mA at 25°C with a maximum on-resistance (Rds On) of 4.25 Ohms at 250mA, 10V. Key parameters include a gate charge (Qg) of 6.5 nC maximum at 10V and input capacitance (Ciss) of 235 pF maximum at 25V. The operating junction temperature range is -55°C to 150°C, with a maximum power dissipation of 2W. This component is suitable for applications in power supplies, lighting, and general-purpose switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 500mA (Tc) |
| Rds On (Max) @ Id, Vgs | 4.25Ohm @ 250mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Tc) |
| Vgs(th) (Max) @ Id | 4.25V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 450 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 235 pF @ 25 V |
Request a Quote
Clients Also Buy
TSM7N90CI C0G
MOSFET N-CH 900V 7A ITO220AB
TQM056NH04LCR RLG
40V, 54A, SINGLE N-CHANNEL POWER
TSM045NA03CR RLG
MOSFET N-CH 30V 108A 8PDFN
