TSM1N45CT A3G
MOSFET N-CH 450V 500MA TO92Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM1N45CT-A3G is an N-Channel MOSFET designed for demanding applications. This component features a 450V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 500mA at 25°C. With a maximum on-resistance (Rds On) of 4.25 Ohms at 250mA and 10V gate-source voltage (Vgs), it offers efficient switching characteristics. The device has a maximum power dissipation of 2W (Tc) and a gate charge (Qg) of 6.5 nC at 10V. The input capacitance (Ciss) is a maximum of 235 pF at 25V. Packaged in a TO-226-3, TO-92-3 (TO-226AA) form factor with through-hole mounting, this MOSFET is suitable for use in power supply, industrial control, and lighting applications. It operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 500mA (Tc) |
| Rds On (Max) @ Id, Vgs | 4.25Ohm @ 250mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Tc) |
| Vgs(th) (Max) @ Id | 4.25V @ 250µA |
| Supplier Device Package | TO-92 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 450 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 235 pF @ 25 V |
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