TSM190N08CZ C0G
MOSFET N-CHANNEL 75V 190A TO220Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM190N08CZ-C0G is an N-Channel MOSFET designed for high-power switching applications. This component features a 75V drain-source breakdown voltage and a continuous drain current capability of 190A at 25°C. With a low on-resistance of 4.2mOhm at 90A and 10V gate-source voltage, it minimizes conduction losses. The TSM190N08CZ-C0G offers a maximum power dissipation of 250W at a case temperature and a gate charge of 160 nC at 10V. Its input capacitance (Ciss) is 8600 pF at 30V. Packaged in a standard TO-220-3 through-hole configuration, this MOSFET is suitable for applications in industrial power systems, automotive electronics, and power supply designs. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 190A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8600 pF @ 30 V |
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