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TSM170N06CP ROG

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TSM170N06CP ROG

MOSFET N-CHANNEL 60V 38A TO252

Manufacturer: Taiwan Semiconductor Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Taiwan Semiconductor Corporation's TSM170N06CP-ROG is a 60V N-Channel Power MOSFET designed for surface mount applications. This component features a low Rds(on) of 17mOhm maximum at 20A and 10V Vgs, ensuring efficient power switching. The continuous drain current is rated at 38A (Tc) with a maximum power dissipation of 46W (Tc). Key electrical parameters include a Vgs(th) of 2.5V (max) at 250µA, gate charge (Qg) of 28.5 nC (max) at 10V, and input capacitance (Ciss) of 900 pF (max) at 25V. The device operates across a temperature range of -55°C to 150°C (TJ) and is supplied in a TO-252 (DPAK) package, typically on tape and reel. This MOSFET is suitable for various applications including power supplies, motor control, and battery management systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C38A (Tc)
Rds On (Max) @ Id, Vgs17mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)46W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageTO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs28.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds900 pF @ 25 V

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