TSM160P04LCRHRLG
MOSFET P-CH 40V 51A 8PDFNManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Taiwan Semiconductor Corporation TSM160P04LCRHRLG is a P-Channel MOSFET designed for demanding applications. This component features a 40V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 51A at 25°C (Tc). With a maximum power dissipation of 69W (Tc), it is suitable for high-power switching. The TSM160P04LCRHRLG offers a low on-resistance (Rds On) of 16mOhm at 10A and 10V gate-source voltage. Its 8-PDFN (5x6) package facilitates surface mounting. Qualification to AEC-Q101 standards indicates its suitability for automotive applications. Key electrical parameters include a gate charge (Qg) of 48 nC at 10V and input capacitance (Ciss) of 2712 pF at 20V. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 51A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 69W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-PDFN (5x6) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2712 pF @ 20 V |
| Qualification | AEC-Q101 |
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